? 2008 ixys corporation, all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 1ma 1000 v v gs(th) v ds = v gs , i d = 8ma 3.0 5.5 v i gss v gs = 30 v, v ds = 0v 200 na i dss v ds = v dss 50 a v gs = 0v t j = 125 c 3 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 250 m ds98949f(05/08) hiperfet tm power mosfet q2-class n-channel enhancement mode avalanche rated, low q g , low intrinsic r g high dv/dt, low t rr features z double metal process for low gate resistance z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect z fast intrinsic rectifier applications z dc-dc converters z switched-mode and resonant-mode power supplies, >500khz switching z dc choppers z pulse generation z laser drivers advantages z plus 264 tm package for clip or spring mounting z space savings z high power density ixfb38n100q2 v dss = 1000v i d25 = 38a r ds(on) 250m t rr 300ns symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c, r gs = 1m 1000 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c38a i dm t c = 25 c, pulse width limited by t jm 152 a i a t c = 25 c38a e as t c = 25 c5j dv/dt i s i dm , v dd v dss , t j 150 c 20 v/ns p d t c = 25 c 890 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10s 300 c t sold plastic body for 10s 260 c f c mounting force 30..120/6.7..27 n / lbs weight 10 g plus264 tm ( ixfb) g d s ( tab ) g = gate d = drain s = source tab = drain
ixys reserves the right to change limits, test conditions, and dimensions. ixfb38n100q2 note: 1. pulse test, t 300 s, duty cycle, d 2 %. plus264 tm (ixfb) outline i f = 25a, v gs = 0v -di/dt = 100 a/ s v r = 100 v symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 24 40 s c iss 13.5 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1035 pf c rss 180 pf t d(on) 25 ns t r 28 ns t d(off) 57 ns t f 15 ns q g(on) 250 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 60 nc q gd 105 nc r thjc 0.14 c /w r thcs 0.13 c /w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 38 a i sm repetitive, pulse width limited by t jm 152 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 300 ns q rm 1.4 c i rm 9 a resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 (external) ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537
? 2008 ixys corporation, all rights reserved ixfb38n100q2 fig. 2. extended output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 0 2 4 6 81012141618202224 v ds - volts i d - amperes v gs = 10v 5v 6v fig. 3. output characteristics @ 125oc 0 5 10 15 20 25 30 35 40 0 2 4 6 8 1012141618202224 v ds - volts i d - amperes v gs = 10v 6v 5v fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 0123456789101112 v ds - volts i d - amperes v gs = 10v 6v 5v fig. 4. r ds(on) normalized to i d = 19a value vs. junction temperature 0.2 0.6 1. 0 1. 4 1. 8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s (on) - normalized i d = 38a i d = 19a v gs = 10v fig. 6. drain current vs. case temperature 0 5 10 15 20 25 30 35 40 -50-25 0 255075100125150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) normalized to i d = 19a value vs. drain current 0.8 1. 0 1. 2 1. 4 1. 6 1. 8 2.0 2.2 2.4 2.6 0 10 20304050607080 i d - amperes r d s (on) - normalized t j = 1 25 o c t j = 25 o c v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. ixfb38n100q2 ixys ref: f_38n100q2(95) 5-27-08-b fig. 11. capacitance 10 0 10 0 0 10000 100000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - pf c iss c oss c rss f = 1mhz fig. 10. gate charge 0 2 4 6 8 10 050100150200250 q g - nanocoulombs v g s - volts v ds = 500v i d = 19a i g = 10ma fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 50 55 60 3.03.54.04.55.05.56.0 v gs - volts i d - amperes t j = 125 o c 25 o c - 40 o c fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1. 0 0 0 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th) j c - (oc/w) fig. 8. transconductance 0 10 20 30 40 50 60 70 80 0 10203040506070 i d - amperes g f s - siemens t j = - 40 o c 25 o c 12 5 o c fig. 9. source current vs. source-to- drain voltage 0 10 20 30 40 50 60 70 80 90 0.2 0.4 0.6 0.8 1.0 1.2 v sd - volts i s - amperes t j = 125 o c t j = 25 o c
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